Some properties of Re2Te5-based materials

被引：5

作者：

Caillat, T ^{[1
]}

Chung, S ^{[1
]}

Fleurial, JP ^{[1
]}

Snyder, GJ ^{[1
]}

Borshchevsky, A ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740377

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Re2Te5 is a semiconducting compound with an energy band gap of about 0.8 eV. It has a relatively complex crystal structure with 84 atoms per unit cell. Initial results obtained at the Jet Propulsion Laboratory on p-type polycrystalline samples showed that they possess large Seebeck coefficient values but also large electrical resistivity values. They also exhibit very low thermal conductivity with a room temperature value of 13 mW/cmK. Another attractive feature of Re2Te5 is the possibility of inserting a variety of atoms in the large voids (2.8 Angstrom in diameter) of the crystal structure to form Re6Mn2Te15 filled compositions. The void fillers could act as phonon scattering centers, further reducing the thermal conductivity in these materials. As part of an effort to evaluate the potential of Re2Te5-based materials for thermoelectric applications, we are currently exploring the synthesis and properties of filled compositions as well as n-type Re2Te5 samples. We present and discuss in this paper initial results obtained on Fe and Ag doped Re2Te5 samples.

引用

页码：298 / 301

页数：4