Proton conduction in thin film yttrium-doped barium zirconate

被引：66

作者：

Shim, Joon Hyung ^{[1
]}

Guer, Turgut M. ^{[2
]}

Prinz, Fritz B. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

Bulk value - Epitaxially grown - MgO(1 0 0) - Morphological structures - Nano scale - Polycrystalline samples - Proton conduction - Yttrium-doped;

D O I：

10.1063/1.2947584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The proton conductivity of yttrium-doped barium zirconate (BYZ) films epitaxially grown on MgO(100) has been studied in the range of 140-290 degrees C as a function of film thickness (60-670 nm) in relation to their crystal and morphological structure at the nanoscale. Highly textured 60 nm BYZ film epitaxially grown on MgO(100) showed high ionic conductivity, close to its bulk value. In contrast, thicker polycrystalline samples with rougher surfaces, caused by grain boundary formation, exhibited lower conductivity. (C) 2008 American Institute of Physics.

引用

页数：3

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