Properties of transparent conducting oxides formed from CdO alloyed with In2O3

被引：54

作者：

Ali, H. M. ^{[1
]}

Mohamed, H. A. ^{[1
]}

Wakkad, M. M. ^{[1
]}

Hasaneen, M. F. ^{[1
]}

机构：

[1] S Valley Univ, Fac Sci, Dept Phys, Sohag 82524, Egypt

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 05期

关键词：

structure properties; transmittance; optical energy gap; resistivity; carrier concentration; mobility carriers;

D O I：

10.1016/j.tsf.2006.06.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO)(1-x)(In2O3)(x) have been grown by electron beam evaporation technique for different concentrations of In2O3 (x=0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from optical data and hence to increased electrical conductivity, which degraded the transparency of the films. An improvement of the electrical and optical properties of Cadmium indium oxide (CdIn2O4) has been achieved by post-deposition annealing. A resistivity value of 7 x 10(-5) Omega cm and transmittance of 92% in the near infrared region and 82% in the visible region have been obtained after annealing at 300 degrees C for 90 min in air. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3024 / 3029

页数：6

共 24 条

[1] Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique [J].