Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition

被引：19

作者：

Bassim, Nabil D. ^{[1
]}

Schenck, Peter K. ^{[1
]}

Donev, Eugene U. ^{[2
]}

Heilweil, Edwin J. ^{[3
]}

Cockayne, Eric ^{[1
]}

Green, Martin L. ^{[1
]}

Feldman, Leonard C. ^{[2
]}

机构：

[1] NIST, Div Ceram, Gaithersburg, MD 20899 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] NIST, Opt Technol Div, Gaithersburg, MD 20899 USA

来源：

APPLIED SURFACE SCIENCE | 2007年 / 254卷 / 03期

关键词：

combinatorial; thin films;

D O I：

10.1016/j.apsusc.2007.05.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VO(x), using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO(2) films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：785 / 788

页数：4

共 14 条

[1]

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