Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

被引：1434

作者：

Li, Hai ^{[1
]}

Yin, Zongyou ^{[1
]}

He, Qiyuan ^{[1
]}

Li, Hong ^{[2
]}

Huang, Xiao ^{[1
]}

Lu, Gang ^{[1
]}

Fam, Derrick Wen Hui ^{[1
]}

Tok, Alfred Iing Yoong ^{[1
]}

Zhang, Qing ^{[2
]}

Zhang, Hua ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelecron Ctr, Singapore 639798, Singapore

来源：

SMALL | 2012年 / 8卷 / 01期

关键词：

MoS2; 2D nanomaterials; mechanical exfoliation; field-effect transistors; gas sensors; GRAPHENE; EXFOLIATION;

D O I：

10.1002/smll.201101016

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single- and multilayer MoS 2 films are deposited onto Si/SiO 2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS 2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS 2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：63 / 67

页数：5

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