MOCVD of antimony oxides for gas sensor applications

被引：11

作者：

Haycock, PW ^{[1
]}

Horley, GA

Molloy, KC

Myers, CP

Rushworth, SA

Smith, LM

机构：

[1] Univ Keele, Sch Chem & Phys, Lennard Jones Labs, Birchall Ctr Inorgan Chem & Mat Sci, Keele ST5 5BG, Staffs, England

[2] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England

[3] Epichem Ltd, Wirral CH62 3QF, Merseyside, England

来源：

JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期

关键词：

D O I：

10.1051/jp4:20013131

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.

引用

页码：1045 / 1050

页数：6

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