Effects of transverse-mode competition on the injection dynamics of vertical-cavity surface-emitting lasers

被引:57
作者
Law, JY
vanTartwijk, GHM
Agrawal, GP
机构
[1] Institute of Optics, University of Rochester, Rochester
来源
QUANTUM AND SEMICLASSICAL OPTICS | 1997年 / 9卷 / 05期
关键词
D O I
10.1088/1355-5111/9/5/007
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate theoretically the static and dynamic characteristics of an optically injected vertical-cavity surface-emitting laser (VCSEL), under both single-and two-mode operation. Our model includes the spatial dependence of both the carrier density and the optical field. We find that within the locking range, a two-mode VCSEL can be forced to operate in a single transverse mode under appropriate conditions. Outside the locking range, the VCSEL shows a rich variety of nonlinear dynamics. Results show that the static and dynamic behaviours depend strongly on the frequency detuning, the injection power and the strength of the intermodal coupling induced by spatial hole burning. In particular, strong intermodal coupling can reduce the sensitivity of the VCSEL toward external injection, in terms of both static (locking) and dynamic (nonlocking) behaviours.
引用
收藏
页码:737 / 747
页数:11
相关论文
共 17 条
[1]   DYNAMIC, POLARIZATION, AND TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
HARBISON, JP ;
HASNAIN, G ;
VONLEHMEN, AC ;
FLOREZ, LT ;
STOFFEL, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1402-1409
[2]  
CHANGHASNAIN CJ, 1995, SEMICONDUCTOR LASERS, pCH5
[3]   GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS [J].
CHOQUETTE, KD ;
SCHNEIDER, RP ;
LEAR, KL ;
LEIBENGUTH, RE .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :661-666
[4]   INJECTION LOCKING PROPERTIES OF A SEMICONDUCTOR-LASER [J].
LANG, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :976-983
[5]   Injection locking dynamics of vertical cavity semiconductor lasers under conventional and phase conjugate injection [J].
Li, H ;
Lucas, TL ;
McInerney, JG ;
Wright, MW ;
Morgan, RA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (02) :227-235
[6]  
Morgan R. A., 1998, IEEE PHOTONIC TECH L, V4, P374
[7]   OPTICAL POLARIZATION BISTABILITY IN TM WAVE INJECTED SEMICONDUCTOR-LASERS [J].
MORI, Y ;
SHIBATA, J ;
KAJIWARA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (03) :265-272
[8]   STRESS EFFECT FOR POLARIZATION CONTROL OF SURFACE EMITTING LASERS [J].
MUKAIHARA, T ;
KOYAMA, F ;
IGA, K .
ELECTRONICS LETTERS, 1992, 28 (06) :555-556
[9]   OPTICAL-INJECTION INDUCED POLARIZATION BISTABILITY IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
PAN, ZG ;
JIANG, SJ ;
DAGENAIS, M ;
MORGAN, RA ;
KOJIMA, K ;
ASOM, MT ;
LEIBENGUTH, RE ;
GUTH, GD ;
FOCHT, MW .
APPLIED PHYSICS LETTERS, 1993, 63 (22) :2999-3001
[10]  
PIPPARD AB, 1985, RESPONSE STABILITY I, P25