Stress generation in silicon particles during lithium insertion

被引:139
作者
Golmon, Stephanie [1 ]
Maute, Kurt [1 ]
Lee, Se-Hee [2 ]
Dunn, Martin L. [2 ]
机构
[1] Univ Colorado, Dept Aerosp Engn Sci, Boulder, CO 80301 USA
[2] Univ Colorado, Dept Mech Engn, Boulder, CO 80301 USA
基金
美国国家科学基金会;
关键词
chemical interdiffusion; discharges (electric); doping profiles; elemental semiconductors; internal stresses; ion implantation; lithium; particle size; reaction kinetics; semiconductor doping; silicon; HIGH-CAPACITY; FRACTURE; ANODES; INTERCALATION; SIMULATION; STRENGTH; STATE;
D O I
10.1063/1.3458707
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a fully-coupled diffusion-elasticity model with Butler-Volmer surface kinetics, we simulate the insertion of lithium into spherical silicon particles. Simulations predict the evolution of concentration, displacements, and stresses in the particles during the first insertion of Li. The particle response depends strongly on the reaction kinetics and the resulting stresses can be above the tensile failure stress of silicon depending on the particle size and discharge rate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458707]
引用
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页数:3
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