High-power robust semiconductor electronics technologies in the new millennium

被引:11
作者
Shenai, K [1 ]
机构
[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA
关键词
power electronics; power semiconductor devices; power semiconductor materials; modeling; reliability; silicon; wide energy band-gap materials;
D O I
10.1016/S0026-2692(01)00010-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an overview of power semiconductor devices for the development of advanced robust high-performance power electronic systems for the new millennium. Material and device technologies on silicon and wide energy band-gap semiconductors are discussed along with switching circuits and topologies. Short-term and long-term reliability issues of power semiconductor devices are discussed. An approach is presented to correlate converter field failures to dynamic switching stresses, residual defects and contaminants left in the semiconductor power switch, packaging, and thermal management. Component and system level simulation, modeling and CAD requirements are evaluated. System-level optimization is proposed as an essential requirement to develop robust power systems at affordable cost. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:397 / 408
页数:12
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