Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT's by means of an InP etch stop layer

被引：45

作者：

Meneghesso, G ^{[1
]}

Buttari, D ^{[1
]}

Perin, E ^{[1
]}

Canali, C ^{[1
]}

Zanoni, E ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report on the elimination of the kink effect and of the hot-electron degradation in InP-based HEMT's which results from the insertion of an InP etch stop layer on top of the InAlAs donor layer. We attribute this improvement to the passivation, by means of InP, of deep levels on the surface of the InAlAs, as demonstrated by transconductance frequency dispersion measurements.

引用

页码：227 / 230

页数：4