Large magnetoresistance in nonmagnetic π-conjugated semiconductor thin film devices -: art. no. 205202

被引:339
作者
Mermer, O [1 ]
Veeraraghavan, G
Francis, TL
Sheng, Y
Nguyen, DT
Wohlgenannt, M
Köhler, A
Al-Suti, MK
Khan, MS
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA
[3] OMR Sensors Inc, Dubuque, IA 52002 USA
[4] Univ Potsdam, Inst Phys, D-14469 Potsdam, Germany
[5] Sultan Qaboos Univ, Dept Chem, Al Khoud 123, Oman
关键词
D O I
10.1103/PhysRevB.72.205202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Following the recent observation of large magnetoresistance at room temperature in polyfluorene sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The study includes a range of materials that show greatly different chemical structure, mobility, and spin-orbit coupling strength. We study both hole and electron transporters at temperatures ranging from 10 K to 300 K. We observe large negative or positive magnetoresistance (up to 10% at 300 K and 10 mT) depending on material and device operating conditions. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.
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页数:12
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