Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2

被引：1545

作者：

Kuc, A. ^{[1
]}

Zibouche, N. ^{[1
]}

Heine, T. ^{[1
]}

机构：

[1] Jacobs Univ Bremen, Sch Sci & Engn, D-28759 Bremen, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 24期

关键词：

MOS2; DICHALCOGENIDES; SPECTROSCOPY; WSE2;

D O I：

10.1103/PhysRevB.83.245213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its slab thickness to a monolayer, MoS2 undergoes a transition to the direct band semiconductor. We support this experimental observation by first-principle calculations and show that quantum confinement in layered d-electron dichalcogenides results in tuning the electronic structure. We further studied the properties of related TS2 nanolayers (T = W, Nb, Re) and show that the isotopological WS2 exhibits similar electronic properties, while NbS2 and ReS2 remain metallic independent of the slab thickness.

引用

页数：4

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