Electrical conduction of Bi4Ti3O12-doped BaTiO3 ceramics sintered at low temperature

BaTiO3 ceramics with a small amount of Bi4Ti3O12 were sintered at a low temperature of 1100 degrees C for 2 h. We report a high densification of the system (BaTiO3 + xBi(4)Ti(3)O(12); 0.01 less than or equal to x less than or equal to 0.03) larger than 90% of BaTiO3 theoretical density except for x = 0.01. We show the measured ac impendances of the samples at approximate to 500 degrees C using the complex plane plotting technique. The results involving large differences between the material resistance are discussed in terms of the final microstructure after the sample firing.