Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires

被引：99

作者：

Lee, Se-Ho ^{[1
]}

Ko, Dong-Kyun ^{[1
]}

Jung, Yeonwoong ^{[1
]}

Agarwal, Ritesh ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

D O I：

10.1063/1.2397558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42 mA for a 28 nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.

引用

页数：3

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