New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy

被引：181

作者：

Oe, K ^{[1
]}

Okamoto, H

机构：

[1] Kyoto Inst Technol, Fac Engn & Design, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

[2] NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 11A期

关键词：

GaAs1-xBix alloy; new semiconductor; temperature-insensitive; metastable alloy; metal-organic vapor phase epitaxy;

D O I：

10.1143/JJAP.37.L1283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new semiconductor alloy material, GaAs1-xBix has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365 degrees C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.

引用

页码：L1283 / L1285

页数：3

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