A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas

被引：20

作者：

Jeong, CH ^{[1
]}

Kim, DW ^{[1
]}

Kim, KN ^{[1
]}

Yeom, GY ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, Kyunggi Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 10期

关键词：

BCl3-based inductively coupled plasmas; sapphire etching; Cl-2/BCl3; HCl/BCl3; HBr/BCl3; photoresist etch mask;

D O I：

10.1143/JJAP.41.6206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cl-2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission ion spectroscope and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800Angstrom/min could be obtained with 20%cHCl/80%/BCl3. The most anisotropic etch profile could be observed in 10% HBr/90%cBCl(3).

引用

页码：6206 / 6208

页数：3

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