Effect of morphology on electron emission characteristics of pulsed laser deposited diamond-like films

被引:15
作者
Chuang, FY
Sun, CY
Cheng, HF
Wang, WC
Lin, IN
机构
[1] NATL TSING HUA UNIV, CTR MAT SCI, HSINCHU 300, TAIWAN
[2] NATL TAIWAN INST TECHNOL, DEPT ELECT ENGN, TAIPEI 117, TAIWAN
[3] NATL TAIWAN INST TECHNOL, DEPT PHYS, TAIPEI 117, TAIWAN
[4] ITRI, ELECT RES & SERV ORG, HSINCHU 300, TAIWAN
关键词
FIELD-EMISSION; CARBON-FILMS; AMORPHOUS-CARBON; CATHODES;
D O I
10.1016/S0169-4332(96)00955-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electron field emission of diamond-like carbon (DLC) films synthesized by pulsed laser deposition technique at 400 degrees C substrate temperature (0.1 mbar N-2 ambient pressure) was turned on at a low electric field as E-1 = 11.6 V/mu m and a secondary deflection in current-voltage (I-V) curve occurred at E-2 = 17.4 V/mu m. The films attained a high emission current density as J = 120 mu/cm(2) under 22 V/mu m applied field. The effective work function estimated from the Fowler-Nordheim plot were phi(1)' = 0.021 eV and phi(2)' = 0.042 eV for low-turn-on regime (E-1 < E-2) and high-turn-on regime (E-2 < E), respectively. The phenomenon of double phi' with a low value in I-V characteristics was attributed to the presence of dual-morphology, i.e., the clusters and the wavy surface, which enhanced the electric field concentration with geometric factors of alpha(1) = 72 and alpha(2) = 36, respectively.
引用
收藏
页码:259 / 263
页数:5
相关论文
共 19 条
[1]   Enhancement of electron emission efficiency of Mo tips by diamondlike carbon coatings [J].
Chuang, FY ;
Sun, CY ;
Cheng, HF ;
Huang, CM ;
Lin, IN .
APPLIED PHYSICS LETTERS, 1996, 68 (12) :1666-1668
[2]   A CARBON NANOTUBE FIELD-EMISSION ELECTRON SOURCE [J].
DEHEER, WA ;
CHATELAIN, A ;
UGARTE, D .
SCIENCE, 1995, 270 (5239) :1179-1180
[3]   ELECTRON-EMISSION FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND AND AMORPHOUS-CARBON FILMS OBSERVED WITH A SIMPLE FIELD-EMISSION DEVICE [J].
FENG, Z ;
BROWN, IG ;
AGER, JW .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (07) :1585-1588
[4]   DIAMOND COLD-CATHODE [J].
GEIS, MW ;
EFREMOW, NN ;
WOODHOUSE, JD ;
MCALEESE, MD ;
MARCHYWKA, M ;
SOCKER, DG ;
HOCHEDEZ, JF .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459
[5]   QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].
HIMPSEL, FJ ;
KNAPP, JA ;
VANVECHTEN, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 20 (02) :624-627
[6]   FIELD-EMISSION FROM P-TYPE POLYCRYSTALLINE DIAMOND FILMS [J].
HONG, D ;
ASLAM, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :427-430
[7]   PREPARATION OF DIAMOND-LIKE CARBON-FILMS BY HIGH-INTENSITY PULSED-ION-BEAM DEPOSITION [J].
JOHNSTON, GP ;
TIWARI, P ;
REJ, DJ ;
DAVIS, HA ;
WAGANAAR, WJ ;
MUENCHAUSEN, RE ;
WALTER, KC ;
NASTASI, M ;
SCHMIDT, HK ;
KUMAR, N ;
LIN, BY ;
TALLANT, DR ;
SIMPSON, RL ;
WILLIAMS, DB ;
QIU, XM .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :5949-5954
[8]   PROPERTIES OF UNHYDROGENATED DIAMOND-LIKE CARBON-FILMS DEPOSITED BY ARF EXCIMER-LASER [J].
KARPMAN, J ;
RIABKINAFISHMAN, M ;
ZAHAVI, J ;
DHAMELINCOURT, D .
DIAMOND AND RELATED MATERIALS, 1994, 4 (01) :10-14
[9]  
KUMAR N, 1995, SOLID STATE TECHNOL, V38, P71
[10]  
LEE KR, 1995, AS S INF DISPL OCT, P175