Fabrication and structural characterization of Mg2SiO4 nanowires

被引：10

作者：

Kim, H. W. ^{[1
]}

Shim, S. H. ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 86卷 / 03期

关键词：

D O I：

10.1007/s00339-006-3774-y

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

This article demonstrates the first reported successful synthesis of Mg2SiO4 nanowires. We have thermally heated Au-coated Si substrates, using a quartz tube with its inner surface pre-coated with MgO nanostructures. We have characterized the sample morphologies by using scanning electron microscopy and transmission electron microscopy (TEM). X-ray diffraction analysis and high-resolution TEM observation coincidentally revealed that the nanowires were crystalline with an orthorhombic Mg2SiO4 structure. We have discussed the possible growth mechanism of Mg2SiO4 nanowires.

引用

页码：361 / 364

页数：4

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