Electromagnetic-pulse functional damage of semiconductor devices modeled using temperature gradients as boundary conditions

Attention is drawn to the problem of functional damage of nanoelements caused by high-power electromagnetic pulses. Investigations of this phenomenon have been stimulated by miniaturization of semiconductor components and the transition to nanoelectronics. A mathematical model of the nonstationary action of electromagnetic pulse on a p-n junction is developed. The temperature gradients within the junction are supposed to be linearly interrelated with coefficient beta << 1. Analytical solutions are obtained for linear, quadratic, and bell-shaped pulses. In the approach suggested, the range of the pulse parameters where the problem remains physically meaningful can be calculated for given parameters of the p-n junction. As a test example, functional damages of p-n junctions in silicon and germanium diodes are considered.