Gate oxide reliability projection to the sub-2 nm regime

被引：62

作者：

Weir, BE

Alam, MA

Bude, JD

Silverman, PJ

Ghetti, A

Baumann, F

Diodato, P

Monroe, D

Sorsch, T

Timp, GL

Ma, Y

Brown, MM

Hamad, A

Hwang, D

Mason, P

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Bell Labs, Lucent Technol, Orlando, FL USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 05期

关键词：

D O I：

10.1088/0268-1242/15/5/304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The important components of reliability projection are investigated. Acceleration parameters are obtained for a 1.6 nm oxide with a soft breakdown criterion. Based on the physical percolation model, the voltage scaling factor for time to breakdown is found to increase with lower voltage, explaining the experimental observation of 6.7 +/- 0.4 dec V-1 for the 1.6 nm oxide, The distribution of breakdown times is shown to be sensitive to thickness variation across the test wafer, and a Weibull slope of 1.38 +/- 0.1 was obtained. The temperature dependence of the time to breakdown was found to be non-Arrhenius and to have a slope of 0.02 dec degrees C-1. Using these parameters, the 1.6 nm oxide was found to have a 10 year lifetime with a 100 ppm failure rate for 1.3 V operation at 100 degrees C. Our understanding of soft breakdown is described as well as an investigation of device operation after soft breakdown, which may further improve the reliability projection.

引用

页码：455 / 461

页数：7

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