Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

被引：54

作者：

Xia, H ^{[1
]}

Zhang, CB ^{[1
]}

Qiu, S ^{[1
]}

Lu, P ^{[1
]}

Zhang, JY ^{[1
]}

Ma, YG ^{[1
]}

机构：

[1] Jilin Univ, Key lab Supramol Struct & Mat Minist Educ, Changchun 130023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1637456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Red electrophosphorescence from light-emitting devices based on ruthenium(II)-complex [Ru(4,7-Ph-2-phen)(3)](2+)-doped wide-band-gap semiconductive polymers, i.e., poly(vinylcarbazole) (PVK), polydihexylfluorene (PDHF), and ladderlike polyphenylene (LPPP), as the emitting layers are reported. However, only highly efficient energy transfer was investigated in a PVK system, not only because of the relatively longer lifetime of its excited state compared with PDHF and LPPP, but also because of the good chemical compatibility of [Ru(4,7-Ph-2-phen)(3)](2+) with PVK. The EL spectra show the characteristic spectrum of [Ru(4,7-Ph-2-phen)(3)](2+), at a peak of 612 nm and Commission Internationale del'Eclairage of (0.62, 0.37). The optimized device indium tin oxide/PVK: 5 wt % [Ru(4,7-Ph-2-phen)(3)](2+)/PBD/Alq(3)/LiF/Al shows the maximum luminance efficiency and power efficiency as 8.6 cd/A and 2.1 lm/W, respectively. (C) 2004 American Institute of Physics.

引用

页码：290 / 292

页数：3

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