The mechanism of TiO2 deposition by direct current magnetron reactive sputtering

被引:49
作者
Barnes, MC
Gerson, AR
Kumar, S
Hwang, NM
机构
[1] Univ S Australia, Ian Wark Res Inst, Adelaide, SA 5095, Australia
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci & Mat, Seoul 151742, South Korea
基金
澳大利亚研究理事会;
关键词
nanostructures; sputtering; clusters; titanium oxide;
D O I
10.1016/S0040-6090(03)01279-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films are generally thought of as being the product of a reaction between the surface and atoms and/or molecules in the gas phase. However, a relatively new theory, the theory of charged clusters (TCC), suggests that charged clusters nucleate in the gas phase and become the growth unit for a thin film. The aim of this study was to determine whether or not TiO2 thin film deposition by DC reactive sputtering occurs via this mechanism. TiO2 was deposited on unheated transmission electron microscopy grids to observe TiO2 clusters, as well as glass and silicon substrates to observe the resulting thin films. The results showed that TiO2 clusters were indeed produced in the chamber of a direct current reactive sputtering system. Furthermore, these clusters were observed as close as 50 mm away from the target. Clusters 3 nm and < 2 nm in diameter were found 250 mm and 50 mm away from the target, respectively. The cluster size was found to have a direct effect on the film deposited. Smaller clusters produced a facetted crystalline anatase film whereas larger clusters produced an amorphous film. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:29 / 36
页数:8
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