High Temperature stable metallization schemes for SiC-Technology operating in air

被引：4

作者：

Gottfried, K ^{[1
]}

Kriz, J ^{[1
]}

Leibelt, J ^{[1
]}

Kaufmann, C ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany

来源：

1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HTEMDS.1998.730691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Complete metallization schemes for SiC based high temperature applications were investigated concerning their physical and chemical stability, and their electrical behaviour under the influence of a high temperature air ambient. Two metal silicides, MoSi2 and WSi2, were used as contacts to the 6H-SiC Substrate. MoSi2 as well as WSi2 show an ohmic behaviour after a thermal contact formation. The obtained specific contact resistance's are in the range from 10(-4) to 10(-5) Omega cm(2). To keep the system design simple for these investigations, the both silicides were used for the on-chip interconnects, too. The connection to the next wiring level was realized by an 3 mu m Aluminum coverlayer and Al-thick wire bonding. All systems show an electrical stable behaviour during a thermal storage at 400 degrees C for more than 1000 hours. No intermixing or degradation within the systems was found by Auger Electron Spectroscopy Depth Profile Analysis and electrical measurements.

引用

页码：153 / 158

页数：6