Open-circuit voltage of organic photovoltaics: Implications of the generalized Einstein relation for disordered semiconductors

被引：22

作者：

Manor, Assaf ^{[1
]}

Katz, Eugene A. ^{[1
,2
]}

机构：

[1] Ben Gurion Univ Negev, Jacob Blaustein Inst Desert Res, Dept Solar Energy & Environm Phys, IL-84990 Sede Boqer, Israel

[2] Ben Gurion Univ Negev, Ilse Katz Inst Nanoscale Sci & Technol, IL-84105 Beer Sheva, Israel

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 97卷

关键词：

Organic photovoltaics; Bulk heterojunction; Open-circuit voltage; Generalized Einstein relation; Disordered semiconductors; DEPENDENCE;

D O I：

10.1016/j.solmat.2011.08.022

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The open-circuit voltage dependence on light intensity and temperature is calculated for organic photovoltaics, taking into account the generalized Einstein relation for disordered semiconductors. The results show that open-circuit voltage losses in bulk-heterojunction organic solar cells are affected from the diffusion enhancement inherent to disordered semiconductors. The model is validated by the fitting to recently published experimental data. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：132 / 138

页数：7

共 28 条

[1] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].