Stress intensities at interface corners in anisotropic bimaterials

Asymptotic stress and displacement fields near the tip of a sharp anisotropic bimaterial interface corner are computed using a combination of the Stroh formalism and the Williams eigenfunction expansion method, From the asymptotic fields, the path independent H-integral is developed and implemented to calculate anisotropic interface corner stress intensities. The calculation procedure is demonstrated for two glass-silicon interface corner configurations that commonly arise in practice in the microsensor industry. In each case, the bimaterial interface corner experiences mixed mode I and II loading, and accurate estimates of both stress intensities are obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.