Observation of the photovoltaic and related effects in porous silicon by scanning tunneling microscopy

被引：10

作者：

Laiho, R

Pavlov, A

Pavlova, Y

机构：

[1] Wihuri Physical Laboratory, University of Turku

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

porous silicon; photovoltaic effects; single-electron tunneling; scanning tunneling microscopy;

D O I：

10.1016/S0040-6090(96)09530-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoassisted scanning tunneling microscopy is used to obtain high-resolution surface topographies of porous silicon and to observe the photovoltaic effect at zero bias. Measurements of the I-V characteristics at some surface points show regular modulation of the current when Vis varied in the region of small bias voltages. This is attributed to charging of nanoparticles having capacitance approximate to 10(-17) F. (C) 1997 Elsevier Science S.A.

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收藏

页码：138 / 141

页数：4

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