Impurity levels in phosphorus- and boron-doped amorphous silicon

被引：3

作者：

Kadas, K

Kugler, S

机构：

[1] Department of Theoretical Physics, Institute of Physics, Technical University of Budapest, Budapest

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1997年 / 76卷 / 03期

基金：

匈牙利科学研究基金会;

关键词：

ELECTRONIC-STRUCTURE; SI CLUSTERS;

D O I：

10.1080/01418639708241093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The AMI semiempirical quantum-chemical method has been used to investigate phosphorus and boron-doped amorphous silicon. A simple relationship for the determination of midgap energy levels is proposed for substitutionally doped amorphous silicon as a function of distances between dopants.

引用

页码：281 / 285

页数：5

共 8 条

[1] AMORPHOUS CLUSTERS .3. THE ELECTRONIC-STRUCTURE OF SI CLUSTERS WITH B AND AL IMPURITIES [J].