Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering

被引：20

作者：

Zhu, L. Q.

Fang, Q.

He, G.

Liu, M.

Xu, X. X.

Zhang, L. D.

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] UCL, London Ctr Nanotechnol & Elect & Elect Engn, London WC1E 7JE, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 06期

关键词：

high-k dielectrics; ZrO2; spectroscopic ellipsometry; Tauc-Lorentz dispersion function; optical constant;

D O I：

10.1016/j.mssp.2006.10.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spectroscopic ellipsometry (SE) with photon energy 0.75-6.5 eV at room temperature has been used to derive the optical properties of high-k ZrO2 thin films on Si(100) substrates prepared by nitrogen-assisted, direct current reactive magnetron sputtering. The Tauc-Lorentz dispersion method was adopted to model the optical dispersion functions of the thin films as a function of annealing temperature. Excellent agreement has been found between the SE fitting results and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR) results, indicating that our model adequately described the measured SE data. Optical band gaps (E-g) were also obtained based on the extracted absorption edge. Our results suggest that nitrogen-assisted process can effectively limit the interfacial layer growth in high-k oxides. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1025 / 1030

页数：6

共 19 条

[1] Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J].

Cho, YJ ;

Nguyen, NV ;

Richter, CA ;

Ehrstein, JR ;

Lee, BH ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1249-1251

[2] Post deposition UV-induced O2 annealing of HfO2 thin films [J].

Fang, Q ;

Liaw, I ;

Modreanu, M ;

Hurley, PK ;

Boyd, IW .

MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) :957-960

[3] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[4] The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films [J].

He, G ;

Fang, Q ;

Liu, M ;

Zhu, LQ ;

Zhang, LD .

JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) :155-162

[5] Effect of O2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks [J].

Houssa, M ;

Naili, M ;

Zhao, C ;

Bender, H ;

Heyns, MM ;

Stesmans, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (01) :31-38

[6] Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si [J].

Howard, JM ;

Craciun, V ;

Essary, C ;

Singh, RK .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3431-3433

[7] Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates [J].

Hu, ZG ;

Ma, JH ;

Huang, ZM ;

Wu, YN ;

Wang, GS ;

Chu, JH .

APPLIED PHYSICS LETTERS, 2003, 83 (18) :3686-3688

[8] Similarities in photoluminescence in hafnia and zirconia induced by ultraviolet photons [J].

Ito, T ;

Maeda, M ;

Nakamura, K ;

Kato, H ;

Ohki, Y .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)

[9] Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si(100) substrate [J].

Lee, C ;

Choi, J ;

Cho, M ;

Park, J ;

Hwang, CS ;

Kim, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :1838-1843

[10] Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys [J].

Lucovsky, G ;

Rayner, GB .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2912-2914

← 1 2 →