Wavelet analysis based deconvolution to improve the resolution of scanning acoustic microscope images for the inspection of thin die layer in semiconductor

被引：34

作者：

Jhang, K

Jang, H

Park, B

Ha, J

Park, I

Kim, K

机构：

[1] Hanyang Univ, Sch Mech Engn, Seongdong Gu, Seoul 133791, South Korea

[2] Sonix Korea, Youngdungpo Gu, Seoul, South Korea

[3] Hanyang Univ, Grad Sch, Dept Precis Mech Engn, Seongdong Gu, Seoul 133791, South Korea

[4] Seoul Natl Univ Technol, Dept Mech Engn, Nowon Gu, Seoul 139743, South Korea

[5] Chosun Univ, Sch Mech Engn, Dong Gu, Kwangju 501759, South Korea

来源：

NDT & E INTERNATIONAL | 2002年 / 35卷 / 08期

关键词：

scanning acoustic microscope (SAM); resolution; deconvolution; wavelet analysis; semiconductor;

D O I：

10.1016/S0963-8695(02)00028-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning acoustic microscopy (SAM) is used as an important non-destructive test tool in semiconductor reliability evaluation and failure analysis. However, inspection of thin die layer has proven difficult as the reflected signals from the die top and bottom are superimposed. Conventional deconvolution techniques have been used for the improvement of time resolution in A-scan signal, however, they are not effective for SAM signal because the waveform of the reflected echo is quite different from the incident waveform due to the frequency dependent attenuation and the focal effect. In this paper, in order to overcome this difficulty, a new signal processing method, wavelet analysis based deconvolution technique is proposed. Its validity is approved by computer simulations and practical performances are demonstrated by experiments for the fabricated semiconductor sample. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：549 / 557

页数：9

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