Effects of Cu5Zn3 addition on the thermoelectric properties of Zn4Sb3

被引：11

作者：

Cui, J. L. ^{[1
]}

Fu, H. ^{[2
]}

Mao, L. D. ^{[3
]}

Chen, D. Y. ^{[2
]}

Liu, X. L. ^{[1
]}

机构：

[1] Ningbo Univ Technol, Inst Mat Engn, Ningbo 315016, Zhejiang, Peoples R China

[2] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221008, Peoples R China

[3] Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou 310014, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; BETA-ZN4SB3; SYSTEM; MERIT;

D O I：

10.1063/1.3171924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structures and thermoelectric properties of mCu(5)Zn(3) center dot nZn(4)Sb(3) with multiphase coexistence are reported. Rietveld analysis reveals that at least 92.3% wt % beta-Zn4Sb3 phase can be obtained with only small quantities of ZnSb and Cu5Zn8 phases precipitated after proper Cu5Zn3 addition. Measurements indicate that although the beta-Zn4Sb3 phase plays a determining role in controlling the transport properties involving the Seebeck coefficient, electrical conductivity, and thermal conductivity, the impurity phases Cu5Zn8 and ZnSb with a crooked riverlike and intertwined tree stump morphologies, respectively, are still of great significance to tune the thermoelectric performance. The highest ZT value of 0.84 can be obtained for the alloy mCu(5)Zn(3) center dot nZn(4)Sb(3) (m/n=1/200) at 631 K, approximately 1.8 times that of undoped beta-Zn4Sb3, proving that a good combination between the transports of carriers and phonons can be achieved if a proper dopant is introduced in the Zn4Sb3 matrix. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3171924]

引用

页数：5

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