Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

被引：35

作者：

Goto, S

Ohta, M

Yabuki, Y

Hoshina, Y

Naganuma, K

Tamamura, K

Hashizu, T

Ikeda, M

机构：

[1] Sony Shiroishi Semicond Inc, Dev Ctr, Shiroishi, Miyagi 9890734, Japan

[2] Sony Corp, Micro Syst Network Co, Core Technol Dev Grp, Atsugi, Kanagawa 2430041, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期

关键词：

D O I：

10.1002/pssa.200303325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 mum, and the maximum light output power of 0.94 W under cw operation at 20 degreesC was achieved for the sample with a stripe width of 10 mum. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 degreesC. This result represents the highest reported output power for blue-violet laser diodes.

引用

页码：122 / 125

页数：4