Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV

被引：26

作者：

Cobet, C

Wilmers, K

Wethkamp, T

Edwards, NV

Esser, N

Richter, W

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] Linkoping Univ, IFM Materiefys, Linkoping, Sweden

来源：

THIN SOLID FILMS | 2000年 / 364卷 / 1-2期

关键词：

dielectric function; optical properties; SiC; spectroscopic ellipsometry;

D O I：

10.1016/S0040-6090(99)00893-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present the dielectric function of hexagonal 4H- and 6H-SiC polytypes as well as the cubic 3C-SiC polytype in the energy range from 3.5 to 10 eV measured by spectroscopic ellipsometry. We operated with synchrotron radiation at the Berlin electron storage ring BESSY I. Additionally the samples were investigated by atomic force microscopy to correct the measured dielectric function for the influence of surface roughness. The experimental results are compared to theoretical calculations. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：111 / 113

页数：3

共 19 条

[1] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].