Ultralow KSiO2 thin films with nano-voids by gas-evaporation technique

被引:3
作者
Nozaki, S [1 ]
Banerjee, S [1 ]
Uchida, K [1 ]
Ono, H [1 ]
Morisaki, H [1 ]
机构
[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
来源
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年
关键词
D O I
10.1109/IITC.2000.854305
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO2 thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO2, film deposited by the gas evaporation technique is a coed candidate for a low-k dielectric in the future Si VLSI.
引用
收藏
页码:140 / 142
页数:3
相关论文
共 3 条
[1]  
NOZAKI S, 1994, MATER RES SOC SYMP P, V351, P399, DOI 10.1557/PROC-351-399
[2]  
PETERS L, 1998, SEMICONDUCTOR IN SEP, P64
[3]  
Singh R., 1999, Electrochemical Society Interface, V8, P26