Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

被引：31

作者：

Izumi, T ^{[1
]}

Narukawa, Y

Okamoto, K

Kawakami, Y

Fujita, S

Nakamura, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Kyoto Univ, Venture Business Lab, Kyoto 6068501, Japan

[3] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

spatial and time-resolved spectroscopy; ELO-GaN; threading dislocation; nonradiative process;

D O I：

10.1016/S0022-2313(99)00594-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (tau(PL)) Of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the tau(PL). measured at wing region (DD = 10(6) cm(-2)) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 10(8) cm(-2)). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1196 / 1198

页数：3

共 6 条

[1] Excitonic emissions from hexagonal GaN epitaxial layers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786

[2] Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth [J].

Chichibu, SF ;

Marchand, H ;

Minsky, MS ;

Keller, S ;

Fini, PT ;

Ibbetson, JP ;

Fleischer, SB ;

Speck, JS ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

DenBaars, SP ;

Deguchi, T ;

Soto, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1460-1462

[3]

IZUMI T, UNPUB

[4] InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J].

Mukai, T ;

Takekawa, K ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (7B) :L839-L841

[5] Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates [J].

Pakula, K ;

Wysmolek, A ;

Korona, KP ;

Baranowski, JM ;

Stepniewski, R ;

Grzegory, I ;

Bockowski, M ;

Jun, J ;

Krukowski, S ;

Wroblewski, M ;

Porowski, S .

SOLID STATE COMMUNICATIONS, 1996, 97 (11) :919-922

[6] Direct evidence that dislocations are non-radiative recombination centers in GaN [J].

Sugahara, T ;

Sato, H ;

Hao, MS ;

Naoi, Y ;

Kurai, S ;

Tottori, S ;

Yamashita, K ;

Nishino, K ;

Romano, LT ;

Sakai, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (4A) :L398-L400

← 1 →