High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures

A new method that combines dip-pen nanolithography (DPN), wet-chemical etching (WCE), and reactive ion etching (RIE) to generate solid Si and SiO x nanostructures. High-throughput patterning of large-area nanostructure arrays is demonstrated using a multipen DPN technique. The obtained large-area Si nanostructured could be used as templates for nanoimprint lithography. The multipen DPN is employed to generate large-area Si nanostructure patterns in a high-throughput fashion. This method possesses several major advantages including versatility, high flexibility, and high throughput in pattering Si or SiOx nanostructures. The method can be used for fabricating high-quality Si nanostructures. It has significant potential for fabricating new types of MEMS, NEMS, or semiconductor devices.