Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy

被引：52

作者：

Guo, Qixin ^{[1
]}

Kume, Yusuke

Fukuhara, Yuji

Tanaka, Tooru

Nishio, Mitsuhiro

Ogawa, Hiroshi

Hiratsuka, Masahiro

Tani, Masahiko

Hangyo, Masanori

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 141卷 / 04期

关键词：

ZnTe; epitaxy; terahertz emission; ultra-broadband; THZ; GAAS;

D O I：

10.1016/j.ssc.2006.10.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnTe films were grown on (0001) sapphire substrates by the metalorganic vapor phase epitaxy (MOVPE) method. Single crystalline (111) ZnTe epitaxial layers were confirmed by x-ray diffraction, reflection high-energy electron diffraction, and cathodoluminescence measurements. Emission of THz radiation with a spectral distribution up to 40 THz was clearly observed from the ZnTe film with a thickness of 10 mu m. The results show that MOVPE is a promising growth method for obtaining high-quality ZnTe epitaxial films on sapphire substrates, which paves the way for obtaining thinner ZnTe films to provide a flatter frequency response in THz device applications. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：188 / 191

页数：4

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