The fabrication of through-wafer interconnects in silicon substrates for ultra-high-vacuum atom-optics cells

被引：8

作者：

Chuang, Ho-Chiao ^{[1
]}

Anderson, Dana Z. ^{[2
]}

Bright, Victor M. ^{[1
]}

机构：

[1] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA

[2] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2008年 / 18卷 / 04期

关键词：

D O I：

10.1088/0960-1317/18/4/045003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

This paper describes a new method for fabricating through-wafer interconnects in atom trapping chips used in ultra-high-vacuum atom-optics cells for Bose-Einstein condensation (BEC) experiments. A fabrication process was developed which uses copper electroplating to seal the vias. The advantages of using feedthrough atom trapping chips are the simple microfabrication process and the reduction of the overall chip area bonded to the glass atom trapping cell. The results demonstrate that 11 A current can be conducted through the vias while the vacuum can be held under 4 x 10(-11) Torr at room temperature. The yield rate of fabricated via interconnects in this process after anodic bonding ( requires heating to 425 degrees C) is 97%.

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页数：10

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