A model of abrasive-free removal of copper films using an aqueous hydrogen peroxide-glycine solution

被引：21

作者：

Zhang, L

Subramanian, RS ^{[1
]}

机构：

[1] Clarkson Univ, Ctr Adv Mat Proc, Potsdam, NY 13699 USA

[2] Clarkson Univ, Dept Chem Engn, Potsdam, NY 13699 USA

来源：

THIN SOLID FILMS | 2001年 / 397卷 / 1-2期

关键词：

abrasive-free polishing; copper films; chemical-mechanical polishing;

D O I：

10.1016/S0040-6090(01)01411-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a recently formulated cell model for mass transport with chemical reaction in chemical-mechanical polishing, predictions are made for the rates of chemical removal of copper from blanket films in a hydrogen peroxide solution containing glycine, and compared with experimental observations. The model requires input regarding the kinetics of the reaction, geometrical parameters, and the relative velocity between the wafer and the pad. Predictions of the removal rate as a function of the relative velocity between the wafer and the pad at three different glycine concentrations are found to be consistent with the trend displayed by experimentally measured results from a chemical-mechanical polishing tool. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 151

页数：9

共 21 条

[1]

BABU SV, 1998, P 15 INT VLSI MULT I, P443

[2] COMPARISON OF GPC ELUTION CHARACTERISTICS AND DIFFUSION-COEFFICIENTS OF ASPHALTENES [J].