Polycrystalline to single-crystalline InN grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy

被引：31

作者：

Hsiao, CL

Tu, LW ^{[1
]}

Chen, M

Jiang, ZW

Fan, NW

Tu, YJ

Wang, KR

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 33-36期

关键词：

InN; MBE; Si; nanocolumn; epilayer; Hall measurement; photoluminescence; XRD;

D O I：

10.1143/JJAP.44.L1076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural evolution of InN from microsized grains to nanocolumns, and to a two-dimensional epifilm grown on Si(111) substrates was realized by plasma-assisted molecular-beam epitaxy. Grainy InN was grown at a higher substrate temperature, and a higher N-BEP/In-BEP ratio, and on a low-temperature InN buffer layer. A high-quality InN epifilm was grown at a lower substrate temperature, and a lower NBEP/InBEP ratio, and on a high-temperature AIN buffer layer with a room-temperature Hall mobility and a carrier concentration of 860cm(2)/(V.s) and 8.9 x 10(18) cm(-3), respectively. Photoluminescence spectroscopy showed a unique peak in the infrared region indicating that the energy gap of the InN is in the range of 0.64-0.66eV.

引用

页码：L1076 / L1079

页数：4

共 28 条

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