Thermal rectification at silicon-amorphous polyethylene interface

被引:92
作者
Hu, Ming [1 ,2 ]
Keblinski, Pawel [1 ,2 ]
Li, Baowen [3 ]
机构
[1] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
关键词
D O I
10.1063/1.2937834
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW/m(2) K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer. (C) 2008 American Institute of Physics.
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页数:3
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