Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation

被引:39
作者
Jasenek, A [1 ]
Schock, HW [1 ]
Werner, JH [1 ]
Rau, U [1 ]
机构
[1] Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, Germany
关键词
D O I
10.1063/1.1415345
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cu(In,Ga)Se-2/CdS/ZnO solar cells need at least 10(18) cm(-2) electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between 130 and 160 degreesC leads to a full recovery of the device performance. Isochronal annealing experiments unveil that the annealing of the irradiation-induced defects has an activation energy of 1.05 eV. (C) 2001 American Institute of Physics.
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页码:2922 / 2924
页数:3
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