Electric-field dependent spin diffusion and spin injection into semiconductors -: art. no. 201202

被引：172

作者：

Yu, ZG ^{[1
]}

Flatté, ME ^{[1
]}

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.66.201202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high electric-field diffusive regime which has no analog in metals. In this regime there are two distinct spin-diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude. This enhancement also occurs for high electric-field spin injection through a spin-selective interfacial barrier.

引用

页码：2012021 / 2012024

页数：4

共 21 条

[1]

ARONOV AG, 1976, SOV PHYS SEMICOND+, V10, P698

[2] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].