Anisotropy, hysteresis, and morphology of self-patterned epitaxial Fe/MgO/GaAs films -: art. no. 174410

被引:30
作者
Cebollada, F
Hernando-Mañeru, A
Hernando, A
Martínez-Boubeta, C
Cebollada, A
González, JM
机构
[1] UPM, EUIT Telecomun, Dept Fis Aplicada, Madrid 28031, Spain
[2] Univ Complutense Madrid, RENFE, IMA, Madrid 28230, Spain
[3] CSIC, ICMM, E-28049 Madrid, Spain
[4] CSIC, CNM, IMM, Madrid 28760, Spain
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 17期
关键词
D O I
10.1103/PhysRevB.66.174410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dependence of the effective anisotropy and of the magnetization reversal processes on the deposition temperature of a series of epitaxial Fe/MgO/GaAs films, grown by a combination of laser ablation and sputtering, has been discussed and correlated to their local morphology and crystallinity. The transverse susceptibility measurements have evidenced the presence of a fourfold effective anisotropy for all films, irrespective of their deposition temperature and local morphology, with a constant value very close to that of single-crystalline iron. The magnetization processes evolve with increasing deposition temperature from a nucleation-expansion-propagation mechanism, taking place in smooth continuous films, to pinning, occurring in self-patterned films with homogeneous distributions of defects, and then to fully isotropic reversal, for tiled films composed of rectangular elements.
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收藏
页码:1 / 8
页数:8
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