Influence of device and circuit parameters on the switching losses of an ultra fast CoolMOS/SiC-diode device-set: Simulation and measurement

被引：4

作者：

Petzoldt, J ^{[1
]}

Reimann, T ^{[1
]}

Lorenz, L ^{[1
]}

Zverev, I ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Dept Power Elect & Control, D-98684 Ilmenau, Germany

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device-set consists of an ultra fast CoolMOS (TM) and an ultra fast high voltage ThinQ!(TM) SiC-Schottky diode nearly reaches the performance (losses, frequency, ruggedness) of pure SiC technology. So, new fields of application can be opened with future converter generations in high frequency power electronics. To optimize the circuits, the influence of parasitic parameters of the power semiconductor devices and circuit topologies on the switching behavior has to be analyzed exactly. Therefore, a suitable simulation tool was developed and verified by measurements in a typical application circuit. Results of simulations and measurement are presented in this paper.

引用

页码：187 / 190

页数：4