Impurity incorporation during sublimation growth of 6H bulk SiC

被引：14

作者：

Schulz, D ^{[1
]}

Wagner, G ^{[1
]}

Dolle, J ^{[1
]}

Irmscher, K ^{[1
]}

Müller, T ^{[1
]}

Rost, HJ ^{[1
]}

Siche, D ^{[1
]}

Wollweber, J ^{[1
]}

机构：

[1] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

D O I：

10.1016/S0022-0248(98)01038-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Secondary ion mass spectroscopy (SIMS) and inductively coupled plasma spectroscopy (ICP-OES and ICP-MS) have been used to study the impurity concentration within different stages of the SiC crystal growth technology. The pure constituents silicon and carbon, the synthesized SiC powder as well as sublimation grown crystals of 6H polytype were investigated. It was found that the main impurities are iron, aluminium, tungsten, vanadium, nickel and copper. Although high purity silicon and carbon were used as starting materials the impurity level increases due to the preparation technique. However, in comparison to the SIC source powder the crystals show a reduction in the impurity concentration by one order of magnitude. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1024 / 1027

页数：4

共 5 条

[1]

Glass RC, 1996, INST PHYS CONF SER, V142, P37

[2]

Heindl J, 1997, PHYS STATUS SOLIDI A, V162, P251, DOI 10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO

[3]

2-7

[4] Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method [J].