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Planar substrate emitting microcavity light emitting diodes with 20% external QE
被引：3
作者：
DeNeve, H
Blondelle, J
VanDaele, P
Demeester, P
Baets, R
Borghs, G
机构：
来源：
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS
|
1997年
/
3002卷
关键词：
LED;
microcavity;
resonant cavity;
photon recycling;
extraction efficiency;
guided mode;
InGaAs QW;
infrared;
electroluminescence;
D O I：
10.1117/12.271047
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The external QE of microcavity light emitting diodes strongly depends on the device size and operational current density. Our experiments reveal that spectral broadening of the optical spectrum emitted by the three InGaAs QW's as well as photon recycling of photons originally emitted into the guided mode of the cavity can explain these differences. An optimized microcavity layer design yielded external QE's of 20% for substrate emitting light emitting diodes with diameters of 1.5 mm.
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页码：74 / 84
页数：11
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