Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate

被引：10

作者：

Khoo, EA

Pabla, AS

Woodhead, J

David, JPR

Grey, R

Rees, GJ

机构：

[1] Dept. of Electron. and Elec. Eng., University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 11期

关键词：

gallium arsenide; semiconductor junction lasers;

D O I：

10.1049/el:19970615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the lowest threshold current density to date of a strained InGaAs/GaAs/AlGaAs single quantum well separate confinement heterostructure laser grown on a (111)B GaAs substrate. A J(th) value as low as 87 A/cm(2) has been obtained for a 2500 mu m long broad area laser. The internal quantum efficiency is estimated to be 82% and the internal loss is 5.5 cm(-1).

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收藏

页码：957 / 958

页数：2

相关论文

共 7 条

[1] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE [J].

CHAND, N ;

BECKER, EE ;

VANDERZIEL, JP ;

CHU, SNG ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1704-1706

[2] Laser diodes in piezoelectric quantum-well structures [J].

Cooper, C ;

Westwood, DI ;

Blood, P .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2415-2417

[3] REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES [J].

HAYAKAWA, T ;

KONDO, M ;

SUYAMA, T ;

TAKAHASHI, K ;

YAMAMOTO, S ;

HIJIKATA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L302-L305

[4] LONG-WAVELENGTH (1072 NM) STRAINED INGAAS QUANTUM-WELL LASERS GROWN ON 1.0-DEGREES MISORIENTED (111)B GAAS [J].

ISHIHARA, A ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A) :1361-1362

[5] Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration [J].

Pabla, AS ;

Woodhead, J ;

Khoo, EA ;

Grey, R ;

David, JPR ;

Rees, GJ .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1595-1597

[6] GROWTH OF INGAAS/GAAS STRAINED QUANTUM-WELLS ON GAAS(111)B SUBSTRATES AND CONTINUOUS-WAVE OPERATION OF (111)-ORIENTED INGAAS STRAINED-QUANTUM-WELL LASERS [J].

TAKEUCHI, T ;

MURAKI, K ;

HANAMAKI, Y ;

FUKATSU, S ;

YAMADA, N ;

OGASAWARA, N ;

MIKOSHIBA, N ;

SHIRAKI, Y .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1338-1343

[7] BLUE-GREEN SURFACE-EMITTING 2ND-HARMONIC GENERATORS ON (111) B GAAS [J].

VAKHSHOORI, D ;

FISCHER, RJ ;

HONG, M ;

SIVCO, DL ;

ZYDZIK, GJ ;

CHU, GNS ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :896-898