Orientation dependence of the elastic instability on strained SiGe films

被引：18

作者：

Aqua, J. -N. ^{[1
]}

Gouye, A. ^{[1
]}

Auphan, T. ^{[1
]}

Frisch, T. ^{[1
]}

Ronda, A. ^{[1
]}

Berbezier, I. ^{[1
]}

机构：

[1] Aix Marseille Univ, CNRS, Inst Mat Microelect Nanosci Provence, UMR 6242, F-13997 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

SURFACE-DIFFUSION; EQUILIBRIUM SHAPE; SI(001); NANOSTRUCTURES; GROWTH; LAYERS; STEPS;

D O I：

10.1063/1.3576916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

At low strain, SiGe films on Si substrates undergo the Asaro-Tiller-Grinfeld morphological instability. We demonstrate experimentally that this instability develops on Si(001) but not on Si(111) even after long annealing. Using a continuum description of surface diffusion in presence of wetting, elasticity, and surface energy anisotropy, we find a retardation of the instability on Si(111) due to a strong dependence of the instability onset as function of the surface stiffness. This retardation is at the origin of the inhibition of the instability on experimental time scales even after long annealing. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3576916]

引用

页数：3

共 20 条

[1] Influence of surface energy anisotropy on the dynamics of quantum dot growth [J].