Erbium as a probe of everything?

被引:111
作者
Polman, A [1 ]
机构
[1] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
关键词
erbium;
D O I
10.1016/S0921-4526(01)00573-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Erbium is a lanthanide ion with unique electronic and optical properties. fn its trivalent state it is composed of an incompletely filled 4f inner shell and two closed outer shells. By employing these properties in specific material systems, Er can be used to probe point defects, oxygen, OH, Er, radiation defects, network structure, excitons, optical density of states, optical modes, and photonic bandstructure. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:78 / 90
页数:13
相关论文
共 42 条
[1]   LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].
ADLER, DL ;
JACOBSON, DC ;
EAGLESHAM, DJ ;
MARCUS, MA ;
BENTON, JL ;
POATE, JM ;
CITRIN, PH .
APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183
[2]  
Blasse G., 1994, LUMINESCENT MAT, DOI [10.1007/978-3-642-79017-1_1, DOI 10.1007/978-3-642-79017-1_1]
[3]   Size-dependent electron-hole exchange interaction in Si nanocrystals [J].
Brongersma, ML ;
Kik, PG ;
Polman, A ;
Min, KS ;
Atwater, HA .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :351-353
[4]   TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI [J].
COFFA, S ;
FRANZO, G ;
PRIOLO, F ;
POLMAN, A ;
SERNA, R .
PHYSICAL REVIEW B, 1994, 49 (23) :16313-16320
[5]  
COFFA S, 1993, MATER RES SOC SYMP P, V301, P125, DOI 10.1557/PROC-301-125
[6]   ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON [J].
CUSTER, JS ;
POLMAN, A ;
VANPINXTEREN, HM .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) :2809-2817
[7]  
DEDOOD MJA, 2001, IN PRESS PHYS REV A
[8]  
DEDOOD MJA, 2001, IN PRESS IEE OPT QUA
[9]  
Drexhage K. H., 1970, J LUMIN, V1, P693, DOI DOI 10.1016/0022-2313(70)90082-7
[10]   OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES [J].
FAVENNEC, PN ;
LHARIDON, H ;
MOUTONNET, D ;
SALVI, M ;
GAUNEAU, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04) :L524-L526