Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells

被引：46

作者：

Grüning, H

Kohary, K

Baranovskii, SD ^{[1
]}

Rubel, O

Klar, PJ

Ramakrishnan, A

Ebbinghaus, G

Thomas, P

Heimbrodt, W

Stolz, W

Rühle, WW

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[4] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 1, NO 1 | 2004年 / 1卷 / 01期

关键词：

D O I：

10.1002/pssc.200303604

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Exciton photoluminescence (PL) in a GaInNAs/GaNAs quantum well was measured in the temperature range from 15 K to 300 K. Two striking features of the PL were observed: the nonmonotoneous temperature dependence of the Stokes shift and the abrupt increase of the PL linewidth in a rather narrow temperature range. These features are known to be strong indications of the hopping relaxation of excitons via localized states distributed in space and energy. Computer simulations of the hopping relaxation of excitons were carried out. Comparison between the simulation results and the experimental data provides an important and reliable information on the energy shape of the density of states and also on the energy range, in which localized states for excitons are distributed. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：109 / 112

页数：4

共 5 条

[1] Temperature-dependent exciton luminescence in quantum wells by computer simulation [J].